Fermi surface mapping/tomography, spin-resolved ARPES, shallow core XPS

Elettra synchrotron, Apple II Quasi-Periodic undulator; variable polarization (horizontal, vertical, circular ±); flux on sample @ 10µm slits (ph./s) >2 x 10¹¹; beam size on the sample 150x50 (HxV, µm²)

8-120 eV

VG Scienta DA30 analyzer; spin detection based on very low energy electron diffraction (VLEED) from magnetic surface oxide targets

(E/dE)  30000

T range:  15-300 K

Preparation chamber with 3 heating stages: HT (RT- 2000K), WT (170K - 900K), LT (RT - 700K); ion gun; 3 evaporator ports (CF40); gas inlet leak valve; LEED+AES (Omicron SPECTALEED)

MOKE magnetometry: Transversal (Hmax=600 Oe), Polar (Hmax=3000 Oe), 3D (Hmax=80 Oe); atomic resolution STM (room temperature, ETH-Z built)

Soft-x-ray-VUV and resonant angle-resolved photoelectron spectroscopy, resonant photoelectron diffraction, resonant x-ray photoemission spectroscopy, fast photoemission with selectable polarization;
core levels, valence band, work function, Auger, surface and bulk band dispersion, empty states in the conduction band, magnetic remanence, strain in thin films, time-resolved spectral evolutions during surface reactions

Elettra synchrotron, Apple II undulators; variable polarization (horizontal, vertical, circular ±); beam size on the sample 350x350 (HxV, µm²); vertical size can be reduced on request; flux on sample @ 10µm slits (best resolution) (ph./s) 2 x 10¹² -6 x 10¹⁰

35-1650 eV

VG Scienta R3000 analyzer with slit(s) perpendicular to the scattering plane

(E/dE) 20000-5000

Many samples can be accomodated in a 25x25 mm² area; T range: 50-1200 K (PID-controlled)

Base pressure: UHV

Both preparation and main chambers with heating stages (e-beam, direct current, PBN), ion gun (VG), 4 evaporator ports (CF40), gas inlet valve (variable leak valve), diamond file scraper, cleaver; evaporators for organic molecules; e-beam evaporators (Omicron) for metals (evaporation at low sample temperatures is also possible); LEED (OciLEED)

XAS is possible in the same chamber; quick XPS acquisition mode (300 ms per spectrum); 4 degree-of-freedom manipulator (rotation axis perpendicular to the scattering plane); possibility to measure at T>300 K; electrical Insulation of the sample: possibility to apply a voltage and measure the work function; possibility to superimpose synchrotron beam to external light sources to study photoinduced phenomena

Soft-X-ray radiation, Resonant Inelastic X-ray Scattering (RIXS) and ARPES

Fixed-gap undulator, circular and 0-180^o variable linear polarization, flux on sample up to 10¹³ ph/s/0.01%BW/400 mA, spot size 10x74 µm² (ARPES); 4x52 µm² (RIXS)

300 - 1600 eV

PHOIBIOS-150 analyser, constant angular dispersion through the whole operative energy range

Better than 0.07^o at 1 keV; up to 33000 (E/ΔE, 1 keV)

CARVING manipulator

Temperatures down to 10.5 K

UHV

Transfer chamber equipped with LEED, load-lock, low-T cleavage, preparation chamber: gas exposure, ion bombardment, heating up to 1000^oC, and thin film deposition

RIXS endstation available

The Surface and Interface Spectroscopy (SIS) beamline provides a state-of-the-art experimental set-up to study the electronic band structure of novel complex materials by spin- and angle-resolved photoelectron spectroscopies. The beamline has been designed for the energy range from 10 to 800 eV with high flux, high resolution, variable polarization, and low high-harmonic contamination

EM crossed field undulator, linear horizontal (10 - 800 eV),  linear vertical (100 - 800 eV), circular left/right (50-800 eV) , flux at 200 eV  2x10¹³ ph/s/0.1%BW/0.4A, spot size on sample at 200 eV 50μm x 100μm

10 - 800 eV

VG-SCIENTA R4000 photoelectron spectrometer for a total angular acceptance of 30 degrees

Up to 10000 (E/ΔE)

CARVING manipulator

Temperatures down to 10 K and up to 400 K, sample dimensions: diameter < 10mm, thickness ~0.1 - 3mm

UHV

In-situ cleaving, sample preparation and characterization chamber: ion sputtering, annealing (300K-1000K), LEED

Spin- and angle- resolved photoemission spectroscopy endstation available

The PEARL (Photoemission and atomic resolution laboratory) beamline is dedicated to the structural characterisation of local bonding geometry of molecular adsorbates on metal or semiconductor surfaces, of nanostructured surfaces, and of surfaces of complex materials. It is a soft X-ray beamline with an angle-resolved photoelectron spectrometer for angle-scanned and photon energy-scanned X-ray photoelectron diffraction (XPD)

Bending magnet, linear horizontal, partial circular left/right, flux on sample at 1 keV: 2x10¹¹ph/s, spot size: 170μm H x 73μm V, FWHM,  1mm x1mm

60 - 2000 eV

Scienta EW4000 detector

Up to 7000 at 400 eV (E/ΔE)

6-axis Carving manipulator

Temperatures down to 30K, heating to 650 K

UHV

In-situ sample preparation, cooling-heating, LEED, load-loack

STM at temperature of 4K

Time resolution<50ps

UHV, MBE chamber, E/ΔE> 20000

Resolution <120nm

Band mapping, Fermi Surface

SPECS UVS 300 UV light with monochromator for He I (21.2 eV) and He II (40.8eV)

0-18eV or 0-38eV

SPECS PHOIBIOS-150 analyser

Angular resolution of 0.5deg and total energy resolution down to 3meV

T down to 80K, heating to 700K

UHV

Preparation chamber equipped with heating stage (e beam), sputter gun, load lock, LEED, gas inlet leak valve and 3 evaporation ports