Fermi surface mapping/tomography,

Spin-resolved ARPES

Shallow core XPS

Elettra synchrotron, Apple II Quasi-Periodic undulator; variable polarization (horizontal, vertical, circular ±); flux on sample @ 10µm slits (ph./s) >2 x 10¹¹; beam size on the sample 150x50 (HxV, µm²)

8-120 eV

VG Scienta DA30 analyzer; spin detection based on very low energy electron diffraction (VLEED) from magnetic surface oxide targets

(E/dE) 30000

T range: 15-300 K

Preparation chamber with 3 heating stages HT (RT- 2000K), WT (170K - 900K), LT (RT - 700K), ion gun, 3 evaporator ports (CF40), gas inlet leak valve, LEED+AES (Omicron SPECTALEED)

MOKE magnetometry Transversal (Hmax=600 Oe), Polar (Hmax=3000 Oe), 3D (Hmax=80 Oe); atomic resolution STM (room temperature, ETH-Z built)

XPS, UPS

Conventional X-ray source (Mg Kα), He discharge lamp

Mg Ka hv: 1253.6eV; He discharge lamp (hv: 21.2eV, hv: 40.2eV)

PSP 120mm hemispherical electron energy analyser

~0.8eV for XPS, 50meV for UPS

T range:  RT-1500°C

Preparation chamber with CVD and PECVD growth facilities, UHV evaporators, LEED, sputter gun, RGA

Soft x-ray - VUV and resonant angle-resolved photoelectron spectroscopy, resonant photoelectron diffraction, resonant x-ray photoemission spectroscopy, fast photoemission with selectable polarization;
core levels, valence band, work function, Auger, surface and bulk band dispersion, empty states in the conduction band, magnetic remanence, strain in thin films, time-resolved spectral evolutions during surface reactions

Elettra synchrotron, Apple II undulators; variable polarization (horizontal, vertical, circular ±); beam size on the sample 350x350 (HxV, µm²); vertical size can be reduced on request; flux on sample @ 10µm slits (best resolution) (ph./s) 2x10¹²-6x10¹⁰

35-1650 eV

VG Scienta R3000 analyzer with slit(s) perpendicular to the scattering plane

(E/dE) 20000-5000

Many samples can be acccomodated in a 25x25mm² area; T range: 50-1200 K (PID-controlled)

Base pressure: UHV

Both preparation and main chambers with heating stages (e-beam, direct current, PBN), ion gun (VG), 4 evaporator ports (CF40), gas inlet valve (variable leak valve), diamond file scraper, cleaver, evaporators for organic molecules, e-beam evaporators (Omicron) for metals (evaporation at low sample temperatures is also possible), LEED (OciLEED)

XAS is possible in the same chamber; quick XPS acquisition mode (300 ms per spectrum); 4 degree-of-freedom manipulator (rotation axis perpendicular to the scattering plane); possibility to measure at T>300 K; electrical insulation of the sample: possibility to apply a voltage and measure the work function; possibility to superimpose synchrotron beam to external light sources to study photoinduced phenomena

XPS at near ambient pressures

Coherence Applications, X-ray Photon Correlation Spectroscopy (XPCS), Coherent diffractive imaging (CDI), Time-resolved SAXS

X-ray induced Auger spectroscopy, elevated pressure energy analysis

Monochromated X-Ray source FOCUS 500, equipped with differential pumping system

Al K-alpha E =1.487 keV (monochromated)

PHOIBOS 150 2D-DLD Elevated Pressure Energy Analyzer, equipped with differential pumping system

Laser Pointer for sample positioning and alignment

Variable pressure range: 10^-10mbar< P <10^-4mbar; variable temperature range: 100 K < T < 1000 K (liquid N₂ cooling)

Quantitative elemental analysis of surfaces and chemical analysis, flood gun to neutralize charging on non-conducting samples, ion source

Variable polarization XUV high-resolution photoelectron spectroscopy

Undulator, source brilliance: 10²⁰ ph/s/mm²/mrad²/0.1% bw/100 mA, polarization available: circular (variable linear hor./vert. in future)

Energy range 250 eV – 3 keV (design), 250 eV – 2.2 keV  (at present)

Beamline energy resolution <10 meV at 335 eV, <100 meV at 1 keV

Sample type: solid or gas phase (UHV compatible), angle of incidence light – sample: 0 to 90, spot size ON SAMPLE: 5000 μm x 2000 μm to 10 μm x10 μm  (h x v), maximum flux ON SAMPLE: > 10¹⁵ ph/s @ 1keV

Techniques available: experimental platform (6 user setups available for collaborations)

Sample analysis with micro/spectro-scopy correlation (XPS, UPS, LEED, STM)

SPECS XR 50 M X-ray source for FOCUS 500 X-ray monochromator

Single wavelength, Al K_α, 1486.7 eV

SPECS PHOIBIOS-150 analyser

0.44 eV

4-5 degrees of freedom

50K-500K, typically 1cm², other possibilities to be discussed

UHV

Load-lock, preparation chamber, flood gun, sputter, depth profiling, UV source, LEED

UPS and STM also available in the same system

Time resolution<50ps

Resolution<100meV

E/ΔE> 20000

UHV

MBE chamber

Electronic structure determination using scanning-angle-resolved photoemission spectromicroscopy combined with local structural characterisation by means of photoelectron diffraction 

Resolution <120nm

XPS, UPS

- SPECS XR 50 M X-ray source for FOCUS 500 X-ray monochromator with Aluminium (1486.74eV) and Silver (2984 eV)

- SPECS UVS 300 UV light with monochromator with He I (21.2 eV) and He II (40.8eV)

0-1486eV with Al and 0-2900eV with Ag

SPECS PHOIBIOS-150 analyser

0.5eV with Al and 0.5meV with He I

T down to 80K, heating to 700K

UHV

Preparation chamber equipped with heating stage (e beam), sputter gun, load lock, LEED, gas inlet leak valve and 3 evaporation ports

Analysis chamber equipped with flood gun to neutralise charging on non conductive samples

X-ray Photoelectron Spectroscopy micro-analysis of thin-films, bulk materials and prototypical devices

Depth-profiling of inorganic and organic samples

XPS imaging of heterogeneous surfaces at the 10 microns scale

Excitation source: Monochromated X-rays AlKa₁

Sputtering source: Monoatomic Ar (0.25-5 keV)

Gas Cluster Ion Source (Ar cluster size 500-2500; primary energies 0.5-20 keV)

X-rays: 1486.6 eV

Multi-channel detection (128)

Energy resolution: > 0.5 eV

Chemical state mapping: > 7 µm lateral resolution at > 0.8 eV energy resolution

x, y, z (for positioning the area of interest)

θ tilt (for variable-angle XPS)

5x5 mm² <size< 60 mm diameter

Hot/cold sample plate for in-situ cooling (liquid nitrogen) or heating (< 900°C)

Routine base pressure 8x10^-10 mbar, highest allowed pressure 8x10^-6 mbar

4-contacts sample holders for in-situ sample biasing

UHV or inert atmosphere transfer is possible to the following tools: ScientaOmicron/NanoESCA, Nano Auger, ToF-SIMS and UHV AFM