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Metal Enhanced Resists for EUV Lithography
The last 50 years have seen great progress in the field of microelectronics through continuous improvement of manufacturing techniques to enable the fabrication of smaller and more complex components. However, there is increasing difficulty in maintaining progress due to the resolution limitations of 193 nm wavelength photolithography. Next generation lithography techniques such as extreme ultraviolet lithography (EUV) have been developed to facilitate further miniaturisation, but will required novel chemical approaches for the photoresist that records the pattern.